Manuel J. Mendes Website

The inexorable increase of energy demand and the efficiency bottleneck of monocrystalline silicon solar cell technology is promoting the research and development of alternative photovoltaic materials. Copper-arsenic-sulfide (CAS) compounds are still rather unexplored in the literature, yet they have been regarded as promising candidates for use as p-type absorber in solar cells, owing to their broad raw material availability, suitable bandgap and high absorption coefficient. Here, a comprehensive study is presented on the structural and optoelectronic properties of CAS thin-films deposited via radio-frequency magnetron co-sputtering, using a commercial Cu target together with a Cu-As-S target with material obtained from local resources, specifically from mines in the Portuguese region of the Iberian Pyrite Belt. Raman and X-ray diffraction analysis confirm that the use of two targets results in films with pronounced stoichiometry gradients, suggesting a transition from amorphous CAS compounds to crystalline djurleite (Cu31S16), with the increasing proximity to the Cu target. Resistivity values from 4.7 mΩ·cm to 17.4 Ω·cm are obtained, being the lowest resistive films, those with pronounced sub-bandgap free-carrier absorption. The bandgap values range from 2.20 to 2.65 eV, indicating promising application as wide-bandgap semiconductors in third-generation (e.g., multi-junction) photovoltaic devices.

Microstructured transparent conductive oxides (TCOs) have shown great potential as photonic electrodes in photovoltaic (PV) applications, providing both optical and electrical improvements in the solar cells’ performance due to: (1) strong light trapping effects that enhance broadband light absorption in PV material and (2) the reduced sheet resistance of the front illuminated contact. This work developed a method for the fabrication and optimization of wavelength-sized indium zinc oxide (IZO) microstructures, which were soft-patterned on flexible indium tin oxide (ITO)-coated poly(ethylene terephthalate) (PET) substrates via a simple, low-cost, versatile, and highly scalable colloidal lithography process. Using this method, the ITO-coated PET substrates patterned with IZO micro-meshes provided improved transparent electrodes endowed with strong light interaction effects—namely, a pronounced light scattering performance (diffuse transmittance up to  50%). In addition, the photonic-structured IZO mesh allowed a higher volume of TCO material in the electrode while maintaining the desired transparency, which led to a sheet resistance reduction (by  30%), thereby providing further electrical benefits due to the improvement of the contact conductance. The results reported herein pave the way for a new class of photonic transparent electrodes endowed with mechanical flexibility that offer strong potential not only as advanced front contacts for thin-film bendable solar cells but also for a much broader range of optoelectronic applications.

Combined perovskite/crystalline-silicon four-terminal tandem solar cells promise {\textgreater}30{%} efficiencies. Here we propose all-thin-film double-junction architectures where high-bandgap perovskite top cells are coupled to ultrathin c-Si bottom cells enhanced with light trapping. A complete optoelectronic model of the devices was developed and applied to determine the optimal intermediate layers, which are paramount to maximize the cells' photocurrent. It was ascertained that by replacing the transparent conductive oxides by grid-based metallic contacts in the intermediate positions, the parasitic absorption is lowered by 30{%}. Overall, a 29.2{%} efficiency is determined for ∼2 um thick tandems composed of the optimized interlayers and improved with Lambertian light trapping.

One of the most promising approaches to produce industrial-compatible Transparent Conducting Materials (TCMs) with excellent characteristics is the fabrication of TCO/metal/TCO multilayers. In this article, we report on the electro-optical properties of a novel high-performing TCO/metal/TCO structure in which the intra-layer is a micro-structured metallic grid instead of a continuous thin film. The grid is obtained by evaporation of Ag through a mask of polystyrene colloidal micro-spheres deposited by the Langmuir-Blodgett method and partially dry-etched in plasma. IZO/Ag grid/IZO structures with different thicknesses and mesh dimensions have been fabricated, exhibiting excellent electrical characteristics (sheet resistance below 10 $Ømega$/□) and particularly high optical transmittance in the near-infrared spectral region as compared to planar (unstructured) TCM multilayers. Numerical simulations were also used to highlight the role of the Ag mesh parameters on the electrical properties.

A fast method is presented to fabricate plasmonic light trapping structures in just ten minutes ({\textgreater}5 × faster than the present state of art), with excellent light scattering properties. The structures are composed of silver nanoparticles (Ag NPs) deposited by thermal evaporation and self-assembled using a rapid thermal annealing (RTA) system. The effect of the RTA heating rate on the NPs production reveals to be crucial to the decrease of the annealing process. The Ag NPs are integrated in thin film silicon solar cells to form a plasmonic back reflector (PBR) that causes a diffused light reflectivity in the near-infrared (600–1100 nm wavelength region). In this configuration the thicknesses of the AZO spacer/passivating layers between NPs and rear mirror, and between NPs and silicon layer, play critical roles in the near-field coupling of the reflected light towards the solar cell absorber, which is investigated in this work. The best spacer thicknesses were found to be 100 and 60 nm, respectively, for Ag NPs with preferential sizes of about 200 nm. The microcrystalline silicon ($μ$c-Si:H) solar cells deposited on such improved PBR demonstrate an overall 11{%} improvement on device efficiency, corresponding to a photocurrent of 24.4 mA/cm2 and an efficiency of 6.78{%}, against 21.79 mA/cm2 and 6.12{%}, respectively, obtained on flat structures without NPs.

{\textless}h2{\textgreater}Summary{\textless}/h2{\textgreater}{\textless}p{\textgreater}Recent trends in photovoltaics demand ever-thin solar cells to allow deployment in consumer-oriented products requiring low-cost and mechanically flexible devices. For this, nanophotonic elements in the wave-optics regime are highly promising, as they capture and trap light in the cells' absorber, enabling its thickness reduction while improving its efficiency. Here, novel wavelength-sized photonic structures were computationally optimized toward maximum broadband light absorption. Thin-film silicon cells were the test bed to determine the best performing parameters and study their optical effects. Pronounced photocurrent enhancements, up to 37{%}, 27{%}, and 48{%}, respectively, in ultra-thin (100- and 300-nm-thick) amorphous, and thin (1.5-$μ$m) crystalline silicon cells are demonstrated with honeycomb arrays of semi-spheroidal dome or void-like elements patterned on the cells' front. Also importantly, key advantages in the electrical performance are anticipated, since the photonic nano/micro-nanostructures do not increase the cell roughness, therefore not contributing to recombination, which is a crucial drawback in state-of-the-art light-trapping approaches.{\textless}/p{\textgreater}