Carmo Lança

Citation:

Neagu, E. R., R. M. Neagu, C. J. Dias, M. C. Lanca, and J. N. Marat-Mendes, "The determination of the metal-dielectric interface barrier height from the open-circuit isothermal charging current", Journal of Applied Physics, vol. 104, no. 3, 2008.

Abstract:

There is a sustained interest both from theoretical and from practical points of view to understand the isothermal charging and the isothermal discharging currents in dielectrics. The measured currents are analyzed either in terms of polarization mechanisms or in terms of charge injection/extraction at the metal-dielectric interface and the conduction current through the dielectric material. As long as we do not know the nature of the origin of the current, it is not clear what information we can get by analyzing the experimental data. We propose to measure the open-circuit isothermal charging and discharging currents just to overpass the difficulties related to the analysis of the conduction mechanisms in dielectric materials. We demonstrate that besides a polarization current, there is a current related with charge injection or extraction at the metal-dielectric contact and a reverse current related to the charge trapped into the superficial trap states of the dielectric and that can jump at the interface in a reverse way. An analytical expression for the current is proposed. By fitting the experimental data to this analytical equation, two important parameters can be determined: (i) the highest value of the relaxation time for the polarization mechanisms still involved into the transient current and (ii) the height of the potential barrier W-0 at the metal-dielectric interface at the initial time when the step voltage is applied. The value obtained for Al-polyethylene terephthalate interface is (0.43 +/- 0.02) eV. For a charging voltage of 220 V there are 6x10(14) trapped electrons/m(2). (c) 2008 American Institute of Physics.

Notes:

Neagu, E. R. Neagu, R. M. Dias, C. J. Lanca, M. Carmo Marat-Mendes, J. N.

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