Carlos Alberto Nunes de Carvalho

canc's web site

DCM (email)

  • Publications
  • Bio
  • Classes

Dopant transfer from poly-Si thin films to c-Si: an alternative technique for device processing".

Citation:
L., Ricardo, Amaral A., Nunes Carvalho de C., and Lavareda G. "Dopant transfer from poly-Si thin films to c-Si: an alternative technique for device processing"." Materials Science in Semiconductor Processing 42 (2016): 210.
Export
  • Tagged
  • XML
  • BibTex
  • Google Scholar

Recent Publications

  • "Analysis of a new production technique for amorphous silicon solar cells”.
  • Role of rf power on the properties of undopedSnOx films deposited by rf-PERTE at low substrate temperature”
  • Pinpi'n and pinpii'n multilayer devices with voltage controlled readout"
  • Automated rf-PERTE system for room temperature deposition of TCO coatings
  • Dopant transfer from poly-Si thin films to c-Si: an alternative technique for device processing".
  • Undoped InOx Films Deposited by Radio Frequency Plasma Enhanced Reactive Thermal Evaporation at Room Temperature: Importance of Substrate
more
Bookmark and Share

© FCT/UNL - 2025Login Powered by OpenScholar