Pedro Barquinha
Materials Science Department, I3N|CENIMAT
pmcb@fct.unl.pt
(email)
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Olziersky, A., P. Barquinha, A. Vila, C. Magana, E. Fortunato, J. R. Morante, and R. Martins.
"
Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors
."
Materials Chemistry and Physics
. 131 (2011): 512-518.
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Olziersky, Antonis, Pedro Barquinha, Anna Vila, Luis Pereira, Goncalo Goncalves, Elvira Fortunato, Rodrigo Martins, and Juan R. Morante.
"
Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors
."
Journal of Applied Physics
. 108 (2010).
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Recent Publications
Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Next generation of thin film transistors based on zinc oxide
Zinc oxide thin-film transistors
Recent advances in ZnO transparent thin film transistors
more