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C
Casella, C., H. Costantini, A. Lemut, B. Limata, D. Bemmerer, R. Bonetti, C. Broggini, L. Campajola, P. Cocconi, P. Corvisiero, J. Cruz, A. D'Onofrio, A. Formicola, Z. Fulop, G. Gervino, L. Gialanella, A. Guglielmetti, C. Gustavino, G. Gyurky, A. Loiano, G. Imbriani, A. P. Jesus, M. Junker, P. Musico, A. Ordine, F. Parodi, M. Parolin, J. V. Pinto, P. Prati, J. P. Ribeiro, V. Roca, D. Rogalla, C. Rolfs, M. Romano, C. Rossi-Alvarez, A. Rottura, F. Schuemann, E. Somorjai, F. Strieder, F. Terrasi, H. P. Trautvetter, A. Vomiero, and S. Zavatarelli, "A new setup for the underground study of capture reactions", Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, vol. 489, issue 1-3, pp. 160-169, 2002. AbstractWebsite
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B
Branquinho, R., J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. V. Baptista, R. Martins, and E. Fortunato, "{Plastic Compatible Sputtered Ta O Sensitive Layer for Oxide Semiconductor TFT Sensors}", Journal of Display Technology, vol. 9, no. 9, pp. 723–728, 2013. Abstract

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta O was investigated. Structural and morphological features of these films were analyzed before and after annealing at various tem- peratures. The deposited films are amorphous up to 600 Cand crystallize at 700 C in an orthorhombic phase. Electrolyte-insu- lator-semiconductor (EIS) field effect based sensors with an amor- phousTa O sensing layer showed pHsensitivity above 50 mV/pH. For sensors annealed above 200 C pH sensitivity decreased with increasing temperature. Stabilized sensor response andmaximum pHsensitivitywas achieved after low temperature annealing at 200 C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors

Branquinho, R., J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. Viana Baptista, R. Martins, and E. Fortunato, "Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors", Display Technology, Journal of, vol. 9, issue 9, pp. 723-728, 2013. Abstract

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 °C and crystallize at 700 °C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 °C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 °C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.

Branquinho, R., B. Veigas, J. V. Pinto, R. Martins, E. Fortunato, and P. V. Baptista, "Real-time monitoring of PCR amplification of proto-oncogene c-MYC using a Ta2O5 electrolyte-insulator-semiconductor sensor", Biosensors & Bioelectronics, vol. 28, issue 1, pp. 44-49, 2011. Abstract
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Borges, R. P., J. V. Pinto, R. C. da Silva, A. P. Goncalves, M. M. Cruz, and M. Godinho, "Ferromagnetism in ZnO doped with Co by ion implantation", Journal of Magnetism and Magnetic Materials, vol. 316, issue 2, pp. E191-E194, 2007. AbstractWebsite
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Alves, E., R. C. da Silva, J. V. Pinto, T. Monteiro, B. Savoini, D. Caceres, R. Gonzalez, and Y. Chen, "Radiation-damage recovery in undoped and oxidized Li doped MgO crystals implanted with lithium ions", Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 206, pp. 148-152, 2003. AbstractWebsite
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Alves, E., J. V. Pinto, R. C. da Silva, M. Peres, M. J. Soares, and T. Monteiro, "Optical behaviour of Er doped rutile by ion implantation", Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 250, pp. 363-367, 2006. AbstractWebsite
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