Pinto, J. V., R. Branquinho, P. Barquinha, E. Alves, R. Martins, and E. Fortunato,
"Extended-Gate ISFETs Based on Sputtered Amorphous Oxides",
Journal of Display Technology, vol. 9, issue 9, pp. 729-734, 2013.
Abstractn/a
Figueiredo, V., J. V. Pinto, J. Deuermeier, R. Barros, E. Alves, R. Martins, and E. Fortunato,
"p-Type CuxO Thin-Film Transistors Produced by Thermal Oxidation",
Journal of Display Technology, vol. 9, issue 9, pp. 6, 2013.
Abstractn/a
Branquinho, R., J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. Viana Baptista, R. Martins, and E. Fortunato,
"Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors",
Display Technology, Journal of, vol. 9, issue 9, pp. 723-728, 2013.
AbstractThe effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 °C and crystallize at 700 °C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 °C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 °C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.
Santos, R., J. Loureiro, A. Nogueira, E. Elangovan, J. V. Pinto, J. P. Veiga, T. Busani, E. Fortunato, R. Martins, and I. Ferreira,
"Thermoelectric properties of V2O5 thin films deposited by thermal evaporation",
Applied Surface Science, vol. 282, pp. 590-594, 2013.
Abstractn/a
Cruz, M. M., R. C. Silva, J. V. Pinto, R. P. Borges, N. Franco, and A. Casaca,
"{Formation of oriented nickel aggregates in rutile single crystals by Ni implantation}",
Journal of Magnetism and Magnetic Materials, vol. 340: Elsevier, pp. 102–108, 2013.
AbstractThe magnetic and electrical properties of Ni implanted single crystalline TiO2 rutile were studied for nominal implanted fluences between 0.5?1017 cm−2 and 2.0?1017 cm−2 with 150 keV energy, corre- sponding to maximum atomic concentrations between 9 at{%} and 27 at{%} at 65 nm depth, in order to study the formation of metallic oriented aggregates. The results indicate that the as implanted crystals exhibit superparamagnetic behavior for the two higher fluences, which is attributed to the formation of nanosized nickel clusters with an average size related with the implanted concentration, while only paramagnetic behavior is observed for the lowest fluence. Annealing at 1073 K induces the aggregation of the implanted nickel and enhances the magnetization in all samples. The associated anisotropic behavior indicates preferred orientations of the nickel aggregates in the rutile lattice consistent with Rutherford backscattering spectrometry—channelling results. Electrical conductivity displays anisotropic behavior but no magnetoresistive effects were detected.
Figueiredo, V., J. V. Pinto, J. Deuermeier, R. Barros, E. Alves, R. Martins, and E. Fortunato,
"{p-Type Cu O Thin-Film Transistors Produced by Thermal Oxidation}",
Journal of Display Technology, vol. 9, no. 9, pp. 735–740, 2013.
AbstractThin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different tempera- tures (150–450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 Cand its conversion toCuO starts at 250 C. For lower thick- nesses 40 nm, the films oxidized at 250 Cshowed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively.
Branquinho, R., J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. V. Baptista, R. Martins, and E. Fortunato,
"{Plastic Compatible Sputtered Ta O Sensitive Layer for Oxide Semiconductor TFT Sensors}",
Journal of Display Technology, vol. 9, no. 9, pp. 723–728, 2013.
AbstractThe effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta O was investigated. Structural and morphological features of these films were analyzed before and after annealing at various tem- peratures. The deposited films are amorphous up to 600 Cand crystallize at 700 C in an orthorhombic phase. Electrolyte-insu- lator-semiconductor (EIS) field effect based sensors with an amor- phousTa O sensing layer showed pHsensitivity above 50 mV/pH. For sensors annealed above 200 C pH sensitivity decreased with increasing temperature. Stabilized sensor response andmaximum pHsensitivitywas achieved after low temperature annealing at 200 C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors