@article {9e5d14fb82c4487d9100a66282db7c25,
	title = {TFET-Based Power Management Circuit for RF Energy Harvesting},
	journal = {IEEE Journal of the Electron Devices Society},
	volume = {5},
	number = {1},
	year = {2017},
	note = {<p>sem pdf conforme despacho. ERDF TEC2013-45638-C3-2-R</p>
},
	month = {1},
	pages = {7{\textendash}17},
	publisher = {Institute of Electrical and Electronics Engineers},
	abstract = {<p>This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of TFETs allows a better switching performance at sub-0.2 V operation. As a result, improved efficiencies in RF-powered circuits are achieved, thanks to increased rectification performance at low power levels and to the reduced energy required for a proper PMC operation. It is shown by simulations that heterojunction TFET devices designed with III-V materials can improve the rectification process at received power levels below-20 dBm (915 MHz) when compared to the application of homojunction III-V TFETs and Si FinFETs. For an available power of-25 dBm, the proposed converter is able to deliver 1.1 $μ }\text{W}$ of average power (with 0.5 V) to the output load with a boost efficiency of 86{\%}.</p>
},
	keywords = {energy harvesting, power management, radio-frequency, tunnel FET, UHF, ultra-low power},
	issn = {2168-6734},
	doi = {10.1109/JEDS.2016.2619908},
	author = {David Cavalheiro and Francesc Moll and Stanimir Valtchev}
}
