<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jorge Martins</style></author><author><style face="normal" font="default" size="100%">Bahubalindruni, Pydi</style></author><author><style face="normal" font="default" size="100%">Rovisco, Ana</style></author><author><style face="normal" font="default" size="100%">Kiazadeh, Asal</style></author><author><style face="normal" font="default" size="100%">Martins, Rodrigo</style></author><author><style face="normal" font="default" size="100%">Fortunato, Elvira</style></author><author><style face="normal" font="default" size="100%">Barquinha, Pedro</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">{Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits}</style></title><secondary-title><style face="normal" font="default" size="100%">Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">a-IGZO TFTs</style></keyword><keyword><style  face="normal" font="default" size="100%">bias stress</style></keyword><keyword><style  face="normal" font="default" size="100%">large-area flexible electronics</style></keyword><keyword><style  face="normal" font="default" size="100%">robust oxide TFT circuits</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">jun</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://www.mdpi.com/1996-1944/10/6/680</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">6</style></number><volume><style face="normal" font="default" size="100%">10</style></volume><pages><style face="normal" font="default" size="100%">680</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 • C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">n/a</style></notes></record></records></xml>