@article {Martins2017,
	title = {{Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits}},
	journal = {Materials},
	volume = {10},
	number = {6},
	year = {2017},
	note = {n/a},
	month = {jun},
	pages = {680},
	abstract = {<p>This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 {\textbullet} C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56\% and 172\% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8\%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5\%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.</p>
},
	keywords = {a-IGZO TFTs, bias stress, large-area flexible electronics, robust oxide TFT circuits},
	issn = {1996-1944},
	doi = {10.3390/ma10060680},
	url = {http://www.mdpi.com/1996-1944/10/6/680},
	author = {Jorge Martins and Bahubalindruni, Pydi and Rovisco, Ana and Kiazadeh, Asal and Martins, Rodrigo and Fortunato, Elvira and Barquinha, Pedro}
}
