ZnO:Ga thin films produced by RF sputtering at room temperature: Effect of the power density
- Citation:
- Fortunato, E., V. Assunção, A. Marques, A. Gonçalves, H. Águas, L. Pereira, I. Ferreira, FMB Fernandes, R. J. C. Silva, and R. Martins. "ZnO:Ga thin films produced by RF sputtering at room temperature: Effect of the power density." Materials Science Forum. 455-456 (2004): 12-15.
Abstract:
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Notes:
ORCID Reference type: [bibtex]; ORCID Reference: [@article { cordeirosilva2004,title = {ZnO:Ga thin films produced by RF sputtering at room temperature: Effect of the power density},journal = {Materials Science Forum},year = {2004},volume = {455-456},pages = {12-15},author = {Fortunato, E. and Assunção, V. and Marques, A. and Gonçalves, A. and Águas, H. and Pereira, L. and Ferreira, I. and Fernandes, F.M.B. and Silva, R.J.C. and Martins, R.}}]
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