@article {Pinto2013,
	title = {{Extended-gate ISFETs based on sputtered amorphous oxides}},
	journal = {IEEE/OSA Journal of Display Technology},
	volume = {9},
	number = {9},
	year = {2013},
	note = {n/a},
	pages = {729{\textendash}734},
	abstract = {<p>We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, {\textless}formula formulatype="inline"{\textgreater}{\textless}tex Notation="TeX"{\textgreater}{\$}{\{}hbox{\{}Ta{\}}{\}}{\_}{\{}2{\}}{\{}hbox{\{}O{\}}{\}}{\_}{\{}5{\}}{\{}hbox{\{}:SiO{\}}{\}}{\_}{\{}2{\}}{\$}{\textless}/tex{\textgreater} {\textless}/formula{\textgreater} as the dielectric and {\textless}formula formulatype="inline"{\textgreater}{\textless}tex Notation="TeX"{\textgreater}{\$}{\{}hbox{\{}Ta{\}}{\}}{\_}{\{}2{\}}{\{}hbox{\{}O{\}}{\}}{\_}{\{}5{\}}{\$}{\textless}/tex{\textgreater} {\textless}/formula{\textgreater} as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4{\&amp;}{\#}x2013;pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.</p>
},
	keywords = {Amorphous oxides, ISFET, Ph sensors, Sensing layer, sputtering, Ta-inf2-infO-inf5-inf},
	isbn = {1551-319X VO - 9},
	issn = {1551319X},
	doi = {10.1109/JDT.2012.2227298},
	author = {Pinto, Joana V. and Branquinho, Rita and Barquinha, Pedro and Alves, Eduardo and Martins, Rodrigo and Fortunato, Elvira}
}
