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Bahubalindruni, P.G.a, Tavares Barquinha Martins Fortunato V. c P. b. "Basic analog and digital circuits with a-IGZO TFTs." 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016. 2016. Abstract

This paper presents the characterization of fundamental analog and digital circuits with a-IGZO TFTs from measurements performed at normal ambient. The fundamental blocks considered in this work include digital logic gates, a low-power single stage high-gain amplifier with capcacitive bootstrapping and a level shifter/buffer. These circuits are important functional blocks in analog/Mixed signal IC design with oxide TFTs. Being fabricated at low temperature (< 200 °C), they can find potential applications in low-cost large-area flexible systems. © 2016 IEEE.

Bahubalindruni, G.a, Tavares Barquinha Duarte Martins Fortunato De Oliveira V. G. a P. "Basic analog circuits with a-GIZO thin-film transistors: Modeling and simulation." 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2012. 2012. 261-264. Abstract

This paper addresses a modeling and simulation methodology for analog circuit design with amorphous-GIZO thin-film transistors (TFTs). To reach an effective circuit design flow, with commercially available tools, a TFT model has been first developed with an artificial neural network (ANN). Multilayer perceptron with backpropagation algorithm has been adopted to model the static behavior of the TFT devices, for different aspect ratios. The model was then implemented in Verilog-A, to allow a quick instantiation in circuit. Simulations using Cadence Spectre are performed to validate the model. On a second phase, simulation results of basic analog circuits, with this ANN model, are verified against the actual functional results, namely an adder, subtractor, and current mirror circuit. Results demonstrate not only the ANN model accuracy and compatibility with dc and transient analysis, but also show the a-GIZO TFT capability to perform analog operations. © 2012 IEEE.

Raniero, L., Águas Pereira Fortunato Ferreira Martins H. L. E. "Batch processing method to deposit a-Si:H films by PECVD." Materials Science Forum. 455-456 (2004): 104-107. AbstractWebsite

This work reports a technique to obtain electronic grade intrinsic amorphous silicon using the plasma enhanced chemical vapour deposition technique at 13.56 MHz. The batch processing method consists of igniting the plasma process through a neutral gas such as hydrogen or helium and only feeding the carrier gas containing the species to be decomposed into the reactor when the plasma is stabilized. By doing so, no surface damage is induced in the first deposited layers and so a more compacted and stable film is produced, compared to amorphous films grown by conventional methods. The best deposition conditions to produce films with good transport properties for optoelectronic applications are: temperature ≈ 473 K, 60 < pressure 87 Pa, power density of 32 mW/cm2 and flow of silane ≈ 10 sccm. The growth rate and the microstructure factor are 1.5 Å/s and 3.3×10-2, respectively, while the activation energy ≈ 0.8 eV; dark conductivity at room temperature ≈ 4.37×10-10 (ωcm)-1; photosensiti-vity ≈ 5.02×l06; density of states ≈ 6.6×1015 cm-3; bonded hydrogen concentration ≈ 20 at% and optical band gap ≈ 1.75 eV.

Fantoni, A., Vieira Martins M. R. "Bidimensional numerical analysis of a μc-Si:H P-I-N photodiode under local illumination." Materials Research Society Symposium - Proceedings. Vol. 467. 1997. 765-770. Abstract

The behaviour of a microcrystalline p-i-n junction locally illuminated with monochromatic radiation (incident power of 50 mW/cm2) is analysed by means of numerical experiences. The model used for the two-dimensional analysis of the transport properties of a μc-Si:H p-i-n photo-detector is based on the simultaneous solution of the continuity equations for holes and electrons together with the Poisson's equation. The solution is found on a rectangular domain, taking into account the dimension perpendicular to the junction plane and one on the parallel plane. The lateral effects occurring within the structure, due to the non-uniformity of the illumination, are outlined. The results we present show that the potential profile has a linear variation from the illuminated to the dark neutral region. The lateral components of the electric field and of the current density vectors reveal to be mainly localised inside the doped layers.

c Bernacka-Wojcik, I.a, Lopes Catarina Vaz Veigas Jerzy Wojcik Simoes Barata Fortunato Viana Baptista Águas Martins P. b A. a. "Bio-microfluidic platform for gold nanoprobe based DNA detection-application to Mycobacterium tuberculosis." Biosensors and Bioelectronics. 48 (2013): 87-93. AbstractWebsite

We have projected and fabricated a microfluidic platform for DNA sensing that makes use of an optical colorimetric detection method based on gold nanoparticles. The platform was fabricated using replica moulding technology in PDMS patterned by high-aspect-ratio SU-8 moulds. Biochips of various geometries were tested and evaluated in order to find out the most efficient architecture, and the rational for design, microfabrication and detection performance is presented. The best biochip configuration has been successfully applied to the DNA detection of Mycobacterium tuberculosis using only 3. l on DNA solution (i.e. 90. ng of target DNA), therefore a 20-fold reduction of reagents volume is obtained when compared with the actual state of the art. © 2013 Elsevier B.V.

c c d Mendes, M.J.a b, Morawiec Mateus Lyubchyk Águas Ferreira Fortunato Martins Priolo Crupi S. b T. a. "Broadband light trapping in thin film solar cells with self-organized plasmonic nanocolloids." Nanotechnology. 26 (2015). AbstractWebsite

The intense light scattered from metal nanoparticles sustaining surface plasmons makes them attractive for light trapping in photovoltaic applications. However, a strong resonant response from nanoparticle ensembles can only be obtained if the particles have monodisperse physical properties. Presently, the chemical synthesis of colloidal nanoparticles is the method that produces the highest monodispersion in geometry and material quality, with the added benefits of being low-temperature, low-cost, easily scalable and of allowing control of the surface coverage of the deposited particles. In this paper, novel plasmonic back-reflector structures were developed using spherical gold colloids with appropriate dimensions for pronounced far-field scattering. The plasmonic back reflectors are incorporated in the rear contact of thin film n-i-p nanocrystalline silicon solar cells to boost their photocurrent generation via optical path length enhancement inside the silicon layer. The quantum efficiency spectra of the devices revealed a remarkable broadband enhancement, resulting from both light scattering from the metal nanoparticles and improved light incoupling caused by the hemispherical corrugations at the cells' front surface formed from the deposition of material over the spherically shaped colloids. © 2015 IOP Publishing Ltd.