<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bregman, J.a , Gordon, J.a , Shapira, Y.a , Fortunato, E.b , Martins, R.b , Guimaraes, L.b</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Substrate effect on the electrical properties of a-Si:H thin films and its modification by diffusion-blocking interlayers</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1989</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-80055052298&amp;partnerID=40&amp;md5=33d14f72a46491a6b0eea033ecc7c72c</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">4</style></number><volume><style face="normal" font="default" size="100%">7</style></volume><pages><style face="normal" font="default" size="100%">2628-2631</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Electrical dark conductivity (σd) and surface composition of undoped and doped a-Si:H thin films have been investigated, using coplanar I−V as a function of temperature and Auger electron spectroscopy (AES). The films were prepared by rf glow discharge deposition on standard soda-lime glass and on alkali-free glass substrates. Comparing these two sets of substrates for undoped films, we find that σd of the films deposited on soda-lime glass substrates at room temperature is higher by more than two orders of magnitude, their activation energy is lower by about a factor of 3, and their photosensitivity (σph/σd) is lower by two orders of magnitude than that of the films deposited on alkali-free glass substrates. We suggest that Na ions, leached from the glass into the a-Si:H overlayer play a significant role in determining the film conductivity by creating electrically active donorlike states. This conclusion is supported by similar measurements on p- and n-type a-Si:H films on the same substrates and by AES results. Films of a-Si:H, grown on thin a-Si:C:H interlayers on soda-lime glass, showed very low Na concentrations and low dark conductivities as found by AES and electrical measurements, respectively. The role of the a-Si:C:H interlayers as diffusion barriers is discussed. © 1989, American Vacuum Society. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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