<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, Rodrigo, Fortunato, Elvira, Bicho, Ana, Lavareda, Guilherme</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of the lateral leakage current on amorphous silicon solar cells</style></title><secondary-title><style face="normal" font="default" size="100%">Conference Record of the IEEE Photovoltaic Specialists Conference</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028706870&amp;partnerID=40&amp;md5=eacbd6126871d492c8203e30f048fee3</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">1</style></volume><pages><style face="normal" font="default" size="100%">587-590</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The aim of this work is to interpret the role of the lateral leakage current on the a-Si:H solar cell performances (J-V characteristics, responsivity and the apparent device degradation behaviour), under low illumination conditions.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 0&lt;/p&gt;
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