<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, Elvira, Carvalho, Carlos N., Bicho, Ana, Martins, Rodrigo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of different TCO interfaces on the performances presented by hydrogenated amorphous silicon p-i-n solar cells</style></title><secondary-title><style face="normal" font="default" size="100%">Conference Record of the IEEE Photovoltaic Specialists Conference</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028704495&amp;partnerID=40&amp;md5=22f9649e6715814167b70cfcdb5c037c</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">1</style></volume><pages><style face="normal" font="default" size="100%">646-649</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after while light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 0&lt;/p&gt;
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