<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, Elvira, Lavareda, Guilherme, Martins, Rodrigo, Soares, Fernando, Fernandes, Luis</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High-detection resolution presented by large-area thin-film position-sensitive detectors</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of SPIE - The International Society for Optical Engineering</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029211134&amp;partnerID=40&amp;md5=c702589775d230f91db572e164981526</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">2397</style></volume><pages><style face="normal" font="default" size="100%">259-270</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The aim of this work is to present the main optoelectronic characteristics of large area 1D position sensitive detectors based on amorphous silicon p-i-n diodes. From that, the device resolution, response time and detectivity are derived and discussed concerning the field of applications of the 1D thin film position sensitive detectors.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 8&lt;/p&gt;
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