<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fantoni, Alessandro, Vieira, Manuela, Martins, Rodrigo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of SPIE - The International Society for Optical Engineering</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029237975&amp;partnerID=40&amp;md5=1a84365631e3349bd62f802614828553</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">2397</style></volume><pages><style face="normal" font="default" size="100%">695-702</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The introduction into a traditional p.i.n. structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer (`i-layer'), grown at a higher power density, present a high density of the defects and acts as `gettering centers' able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyze the influence of the `i- layer' position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation rom the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 0&lt;/p&gt;
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