<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, Rodrigo, Fortunato, Elvira</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of SPIE - The International Society for Optical Engineering</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029222262&amp;partnerID=40&amp;md5=75ca0c14b0467a673cbaf49761c4fa51</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">2397</style></volume><pages><style face="normal" font="default" size="100%">745-756</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 0&lt;/p&gt;
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