<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R., Lavareda, G., Soares, F., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Detection limit of large area 1D thin film position sensitive detectors based in a-Si:H P.I.N. diodes</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Research Society Symposium - Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029491967&amp;partnerID=40&amp;md5=32ddc86dd88889183ca7d49c521b0120</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">377</style></volume><pages><style face="normal" font="default" size="100%">791-796</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD). The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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