<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Lateral effects in amorphous silicon photodiodes</style></title><secondary-title><style face="normal" font="default" size="100%">Optical Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029753373&amp;partnerID=40&amp;md5=cac738af0101e28020bcbe0d29c001ef</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">1-2</style></number><volume><style face="normal" font="default" size="100%">5</style></volume><pages><style face="normal" font="default" size="100%">137-144</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The objective of this work is to provide a basis for the interpretation of the a-Si:H photodiode behaviour under low illumination level conditions, where a lateral leakage current plays an important role on the devices' performances when the doped collecting layer can not be considered a true equipotential. To determine this effect, a-Si:H p.i.n devices with small metal dot contacts, matrix distributed, were produced and analysed before and after etching the surrounding doped region of the metal collecting contact. The experimental data fit a model that includes the contribution of a lateral leakage current influencing the J-V characteristics, responsivity and the apparent light degradation behaviour of the device.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 2&lt;/p&gt;
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