<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R., Macarico, A., Ferreira, I., Nunes, R., Bicho, A., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Correlation between electrical-optical and structural properties of microcrystalline silicon N type films</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Research Society Symposium - Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030409864&amp;partnerID=40&amp;md5=76a5b34db3f3f585fc91b25605396272</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">420</style></volume><pages><style face="normal" font="default" size="100%">807-812</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Wide band gap microcrystalline silicon films have aroused considerable interest since they combine some electro-optical advantages of amorphous and crystalline materials highly important to produce electro-optical devices such as TFTs and solar cells. In this paper we present results concerning the electro-optical characteristics of highly transparent and conductive n-type μc-Si based films. Here, emphasis is given to the production of n-type μc-films with optical gaps of 2.3 eV and dark conductivity's of 6.5 Scm-1.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 2&lt;/p&gt;
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