<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Nunes de Carvalho, C., de Nijs, J.M.M., Ferreira, I., Fortunato, E., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improvement of the ITO-p interface in a-Si:H solar cells using a thin SiO intermediate layer</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Research Society Symposium - Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030407693&amp;partnerID=40&amp;md5=36f09248d418819f380bd5c995d8d881</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">420</style></volume><pages><style face="normal" font="default" size="100%">861-865</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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