<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R., Bicho, A., Lavareda, G., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Dependence of amorphous silicon solar cell performances on the lateral drift current</style></title><secondary-title><style face="normal" font="default" size="100%">Solar Energy Materials and Solar Cells</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1997</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030735407&amp;partnerID=40&amp;md5=a327f5523e7be6a0f00475654a99d5b8</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">1</style></number><volume><style face="normal" font="default" size="100%">45</style></volume><pages><style face="normal" font="default" size="100%">1-15</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The aim of this work is to present a model able to explain the role of the lateral drift current on the experimental behaviour exhibited by p-i-n amorphous silicon solar cells (J-V characteristics, responsivity and the apparent device degradation behaviour), when the ratio between the covered and uncovered metal collected areas of the device is higher than one or recrystallization occurs in the edges of the p-i-n junction.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 3&lt;/p&gt;
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