<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R., Ferreira, I., Fernandes, F., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of the deposition conditions on the properties presented by nanocrystallite silicon films produced by hot wire</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Non-Crystalline Solids</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1998</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032064398&amp;partnerID=40&amp;md5=db1fb43a6d45152aeda593bcda733fbe</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">PART 2</style></number><volume><style face="normal" font="default" size="100%">227-230</style></volume><pages><style face="normal" font="default" size="100%">901-905</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The aim of this work is to study the role of hydrogen dilution and filament temperature on the properties of nanocrystalline silicon thin films (undoped and doped) produced by the hot wire technique. These deposition parameters are correlated to the film's structure, composition and electro-optical properties with special emphasis on boron doped nanocrystalline silicon carbide reported here. © 1998 Elsevier Science B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 11&lt;/p&gt;
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