<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R.a b , Fortunato, E.a b</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of the resistive layer on the performances of 2D a-Si:H thin film position sensitive detectors</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1999</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000320596&amp;partnerID=40&amp;md5=3d47090b75eba563c94ddd9a9ecfa70f</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">1-2</style></number><volume><style face="normal" font="default" size="100%">337</style></volume><pages><style face="normal" font="default" size="100%">158-162</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The aim of this work is to present an analytical model which can to interpret the role of the collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed. © 1999 Elsevier Science S.A. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 18&lt;/p&gt;
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