<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R., Águas, H., Silva, V., Ferreira, I., Cabrita, A., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Silicon films produced by PECVD under powder formation conditions</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science Forum</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2001</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035689049&amp;partnerID=40&amp;md5=18fffe34e1537e6bd368da111f6932da</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">382</style></volume><pages><style face="normal" font="default" size="100%">21-28</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The process conditions of growing thin silicon films by plasma enhanced chemical vapour deposition (PECVD) were presented. The plasma impedance was found to monitor the powders in the PECVD systems and good quality silicon films were grown close to the plasma regime where the powders were formed. The silicon films exhibited properties which were interpreted based on a two-phase model where silicon nanostructures were embedded in a disordered network.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 0&lt;/p&gt;
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