<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pereira, L., Barquinha, P., Fortunato, E., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science and Engineering B: Solid-State Materials for Advanced Technology</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-15344339242&amp;partnerID=40&amp;md5=dc4fa9092a6a0017715d3aedf3135a4f</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">1-3</style></number><volume><style face="normal" font="default" size="100%">118</style></volume><pages><style face="normal" font="default" size="100%">210-213</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this work we have focused our attention on the role of the gas mixture (O2/Ar) used during HfO2 thin film processing by r.f. magnetron sputtering, to produce dielectrics with suitable characteristics to be used as gate dielectric. Increasing the O2/Ar ratio from 0 to 0.2, the films properties (optical gap, permittivity, resistivity and compactness) are improved. At these conditions, films with a band gap around 5 eV were produced, indicating a good stoichiometry. Also the flat band voltage has a reduction of almost three times indicating also a reduction of the same order on the fixed charge density at the semiconductor-insulator interface. The dielectric constant is around 16 which is very good, since the surface of the silicon where the HfO2 films were deposited contains a SiO 2 layer of about 3 nm that gives an effective dielectric constant above 20, close to the HfO2 stoichiometric value (∼25). Further increase on the O2/Ar ratio does not produce significant improvements. © 2004 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 44&lt;/p&gt;
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