<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, E.a b , Pereira, L.a , Águas, H.a c d , Ferreira, I.a , Martins, R.a e</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Flexible a-Si: H position-sensitive detectors</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the IEEE</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-23244464424&amp;partnerID=40&amp;md5=0d858a2db73c058c564087f329d14db5</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">7</style></number><volume><style face="normal" font="default" size="100%">93</style></volume><pages><style face="normal" font="default" size="100%">1281-1286</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Flexible and large area (5 mm × 80 mm with an active length of 70 mm) position-sensitive detectors (PSDs) deposited onto polymeric substrates (polyimide - Kapton VN) have been fabricated. The optimized structure presented is based on a heterojunction of amorphous silicon (a-Si: H)/ZnO: Al. The sensors were characterized by spectral response, photocurrent dependence as a function of light intensity, and position detection measurements. The set of data obtained on one-dimensional PSDs based on the heterojunction show excellent performances with a maximum spectral response of 0.12 A/W at 500 nm and a nonlinearity of ±10% over 70-mm length. The produced sensors present a nonlinearity higher than those ones produced on glass substrates, due to the different thermal coefficients exhibited by the polymer and the a-Si: H film. In order to prove this behavior, it was measured the defect density obtained by the constant photocurrent method on a-Si: H thin films deposited on polymeric substrates and bent with different radii of curvature. © 2005 IEEE.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 26&lt;/p&gt;
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