<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Raniero, L., Zhang, S., Águas, H., Ferreira, I., Igreja, R., Fortunato, E., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-22944443594&amp;partnerID=40&amp;md5=9262a48e83fff3e7f679e6a0caf0753e</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">1-2</style></number><volume><style face="normal" font="default" size="100%">487</style></volume><pages><style face="normal" font="default" size="100%">170-173</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The aim of this paper is to present results concerning the role of the buffer layer on pin devices, deposited in a single chamber for plasma enhanced chemical vapor deposition, using high hydrogen dilution and pressures at 27.12 MHz. By doing so, we allow the incorporation of nanoparticles into the i-layer, during plasma process. The results show solar cells with 8.8% efficiency with a collection efficiency of 95% in the blue region of the spectra. Apart from that, the results from impedance spectroscopy, imaginary impedance vs. real impedance, show difference of a semicircle radius as function of sample temperatures, which could be explained by total device series resistance variation. © 2005 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 22&lt;/p&gt;
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