<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xu, Y.a , Hu, Z.b c , Diao, H.a , Cai, Y.c , Zhang, S.b , Zeng, X.a , Hao, H.a , Liao, X.a , Fortunato, E.b , Martins, R.b</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Non-Crystalline Solids</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2006</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745474278&amp;partnerID=40&amp;md5=a326a153998c82a3f368b4fb20ff444e</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9-20 SPEC. ISS.</style></number><volume><style face="normal" font="default" size="100%">352</style></volume><pages><style face="normal" font="default" size="100%">1972-1975</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/lT0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 μm)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm2. © 2006 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 30&lt;/p&gt;
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