<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wang, J.a , Sallet, V.b , Jomard, F.b , Botelho do Rego, A.M.c , Elamurugu, E.a , Martins, R.a , Fortunato, E.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of the reactive N2 gas flow on the properties of rf-sputtered ZnO thin films</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2007</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548827052&amp;partnerID=40&amp;md5=f043056a98a20b71a1e8c6dd5c9d9c9d</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">24 SPEC. ISS.</style></number><volume><style face="normal" font="default" size="100%">515</style></volume><pages><style face="normal" font="default" size="100%">8780-8784</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Nitrogen (N)-doped ZnO thin films were RF sputtered with different N2 volume (ranging from 10% to 100%) on sapphire (001) substrates. The influence of N2 vol.% on the properties of ZnO films was analyzed by various characterization techniques. The X-ray diffraction studies showed that the films grow along the preferential (002) crystallographic plane and the crystallinity varied with varying N2 vol.%. The films sputtered with 25 vol.% N2 showed better crystallinity. The transmittance was decreased with increasing N2 volume until 25% and was almost constant above 25%. A maximum optical band gap (2.08 eV) obtained for 10 vol.% N2 decreased with increasing N2 volume to reach a minimum of 1.53 eV at 100%. The compositional analysis confirmed the incorporation of N into ZnO films, and its concentration increased with increasing N2 volume to reach a maximum of ∼ 3.7 × 1021 atom/cm3 at 75% but then decreased slightly to 3.42 × 1021 atoms/cm3. The sign of Hall coefficient confirmed that the films sputtered with ≤ 25 vol.% N2 possess p-type conductivity which changes to n-type for &amp;gt; 25 vol.% N2. © 2007 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 25&lt;/p&gt;
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