<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Barquinha, P., Pereira, L., Goņalves, G., Martins, R., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs</style></title><secondary-title><style face="normal" font="default" size="100%">Electrochemical and Solid-State Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-48249116747&amp;partnerID=40&amp;md5=016ea0f572b4d7e4791ab3888d2de04f</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9</style></number><volume><style face="normal" font="default" size="100%">11</style></volume><pages><style face="normal" font="default" size="100%">H248-H251</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The influence of oxygen content, radio-frequency (rf) sputtering power, and postdeposition annealing on the electrical properties of gallium-indium-zinc oxide (GIZO) thin-film transistors (TFTs) is analyzed. Little to no oxygen content in the sputtering chamber is crucial to obtain high-performance devices, even before annealing. In contrast, a high oxygen content and rf power lead, respectively, to unstable/poor performing and depletion mode TFTs before annealing, and mainly for these &quot;nonideal&quot; conditions, annealing proves to be effective to improve device performance/stability and to decrease the performance discrepancy among TFTs processed under different oxygen and rf power conditions. Best TFTs present a field-effect mobility of 46 cm2 / V s, subthreshold swing of 0.26 V/dec, threshold voltage of 0.70 V, and an on/off ratio 108 - 109. These results are a consequence of the optimized processing and of the usage of proper GIZO target composition, 1:2:1 mol. © 2008 The Electrochemical Society.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 83&lt;/p&gt;
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