<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Filonovich, S.A.a , Águas, H.a b , Bernacka-Wojcik, I.b , Gaspar, C.a , Vilarigues, M.c , Silva, L.B.a b , Fortunato, E.a b , Ma</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure</style></title><secondary-title><style face="normal" font="default" size="100%">Vacuum</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2009</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-67349209304&amp;partnerID=40&amp;md5=ac577d7c2e50fb1eee744ef215342ef6</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">10</style></number><volume><style face="normal" font="default" size="100%">83</style></volume><pages><style face="normal" font="default" size="100%">1253-1256</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (&amp;gt;7 (Ω cm)-1) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer. © 2009 Elsevier Ltd. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 21&lt;/p&gt;
</style></notes></record></records></xml>