<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Alves, E.a , Franco, N.a , Barradas, N.P.a , Munnik, F.b , Monteiro, T.c , Peres, M.c , Wang, J.d , Martins, R.d , Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Structural and optical properties of nitrogen doped ZnO films</style></title><secondary-title><style face="normal" font="default" size="100%">Vacuum</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2009</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-67349258288&amp;partnerID=40&amp;md5=055c51ce6efa482f28c9da1291fec8a2</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">10</style></number><volume><style face="normal" font="default" size="100%">83</style></volume><pages><style face="normal" font="default" size="100%">1274-1278</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Zinc oxide is getting an enormous attention due to its potential applications in a variety of fields such as optoelectronics, spintronics and sensors. The renewed interest in this wide band gap oxide semiconductor relies on its direct high energy gap (Eg ∼ 3.437 eV at low temperatures) and large exciton binding energy. However to reach the stage of device production the difficulty to produce in a reproducible way p-type doping must be overcome. In this study we discuss the structural and optical properties of ZnO films doped with nitrogen, a potential p-type dopant. The films were deposited by magnetron sputtering using different conditions and substrates. The composition and structural properties of the films were studied combining X-ray diffraction (XRD), Rutherford backscattering (RBS), and heavy ion elastic recoil detection analysis (HI-ERDA). The results show an improvement of the quality of the films deposited on sapphire with increasing radio-frequency (RF) power with a preferentially growth along the c-axis. The ERDA analysis reveals the presence of H in the films and a homogeneous composition over the entire thickness. The photoluminescence of annealed samples evidences an improvement on the optical quality as identified by the well structured near band edge recombination. © 2009 Elsevier Ltd. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 8&lt;/p&gt;
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