<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pereira, L.a , Barquinha, P.a , Gonçalves, G.a , Vilà, A.b , Olziersky, A.b , Morante, J.b , Fortunato, E.a , Martins, R.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Sputtered multicomponent amorphous dielectrics for transparent electronics</style></title><secondary-title><style face="normal" font="default" size="100%">Physica Status Solidi (A) Applications and Materials Science</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2009</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-70349151333&amp;partnerID=40&amp;md5=b94a3dc15d7c2447577885c04eef5b8c</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9</style></number><volume><style face="normal" font="default" size="100%">206</style></volume><pages><style face="normal" font="default" size="100%">2149-2154</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this work, we present the structural and electrical properties of HfO 2, HfO 2 +SiO 2, and HfO 2 +Al 2O 3 dielectric composite layers deposited by sputtering without any intentional substrate heating. The films were deposited on glass and 〈100〉 crystalline silicon (c-Si) substrates from ceramic targets by using argon (Ar) and oxygen (O 2) as sputtering and reactive gases, respectively. The incorporation of SiO 2 and Al 2O 3 into hafnia was obtained by co-sputtering and itwas controlled by adjusting the ratio of r.f. power applied between the targets. The HfO 2 films present a microcrystalline structure, when deposited at room temperature (RT). The lowest leakage current in c-Si MIS (Metal-Insulator- Semiconductor) structures (below 10 9A/cm 2 at 10V on films with a thickness around 180 nm) was obtained for an Ar/O 2 ratio of 14:1 sccm, and further increase in O 2 flow does not enhance the electrical characteristics. The codeposition of SiO 2 or Al 2O 3 with hafnia has a strong influence on the structure of the resulting films since they become amorphous. The leakage current in MISstructures incorporating these multi-component dielectrics is reduced at least by a factor of 2, which is accompanied by an increase on the band gap. The dielectric constant is decreased due to the lower values for SiO 2 and Al 2O 3. © 2009 WILEY-VCH Verlag GmbH &amp;amp; Co. KGaA, Weinheim.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 14&lt;/p&gt;
</style></notes></record></records></xml>