<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Barquinha, P.a , Pereira, L.a , Gonçalves, G.a , Kuscer, D.b , Kosec, M.b , Vilà, A.c , Olziersky, A.c , Morante, J.R.d e , Mart</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Low-temperature sputtered mixtures of high-κ and high bandgap dielectrics for GIZO TFTs</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of the Society for Information Display</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-77958198978&amp;partnerID=40&amp;md5=9fc1ee27aea4bdc27fe7807d925301d5</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">10</style></number><volume><style face="normal" font="default" size="100%">18</style></volume><pages><style face="normal" font="default" size="100%">762-772</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;This paper discusses the properties of sputtered multicomponent amorphous dielectrics based on mixtures of high-κ and high-bandgap materials and their integration in oxide TFTs, with processing temperatures not exceeding 1 50° C. Even if Ta2O5 films are already amorphous, multicomponent materials such as Ta2O5-SiO2 and Ta2O5-Al2O3 allow an increase in the bandgap and the smoothness of the films, reducing their leakage current and improving (in the case of Ta2O5-SiO2)the dielectric/semiconductor interface properties when these dielectrics are integrated in TFTs. For HfO2- based dielectrics, the advantages of multicomponent materials are even clearer: while HfO2 films present a polycrystalline structure and a rough surface, HfO2-SiO2 films exhibit an amorphous structure and a very smooth surface. The integration of the multicomponent dielectrics in GIZO TFTs allows remarkable performance, comparable with that of GIZO TFTs using SiO2 deposited at 400°C by PECVD. For instance, with Ta2O5-SiO2 as the dielectric layer, field-effect mobility of 35 cm2/(V-sec), close to 0 V turn-on voltage, an on/off ratio higher than 106, a subthreshold slope of 0.24 V/dec, and a small/recoverable threshold voltage shifts under constant current (ID = 10 μ,A) stress during 24 hours are achieved. Initial results with multilayers of SiO2/HfO 2-SiO2/SiO2 are also shown, allowing a lower leakage current with lower thickness and excellent device performance. © Copyright 2010 Society for Information Display.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 28&lt;/p&gt;
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