<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gokulakrishnan, V.a , Parthiban, S.a c , Elangovan, E.c , Ramamurthi, K.a , Jeganathan, K.b , Kanjilal, D.d , Asokan, K.d , Mart</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effects of O7+ swift heavy ion irradiation on indium oxide thin films</style></title><secondary-title><style face="normal" font="default" size="100%">Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958022721&amp;partnerID=40&amp;md5=c47ee1bd610d33f9b306b7a6e89db394</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">16</style></number><volume><style face="normal" font="default" size="100%">269</style></volume><pages><style face="normal" font="default" size="100%">1836-1840</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Indium oxide thin films deposited by spray pyrolysis were irradiated by 100 MeV O7+ ions with different fluences of 5 × 1011, 1 × 1012 and 1 × 1013 ions/cm2. X-ray diffraction analysis confirmed the structure of indium oxide with cubic bixbyite. The strongest (2 2 2) orientation observed from the as-deposited films was shifted to (4 0 0) after irradiation. Furthermore, the intensity of the (4 0 0) orientation was decreased with increasing fluence together with an increase in (2 2 2) intensity. Films irradiated with maximum fluence exhibited an amorphous component. The mobility of the as-deposited indium oxide films was decreased from ∼78.9 to 43.0 cm2/V s, following irradiation. Films irradiated with a fluence of 5 × 1011 ions/cm2 showed a better combination of electrical properties, with a resistivity of 4.57 × 10-3 Ω cm, carrier concentration of 2.2 × 1019 cm-3 and mobility of 61.0 cm2/V s. The average transmittance obtained from the as-deposited films decreased from ∼81% to 72%, when irradiated with a fluence of 5 × 1011 ions/cm2. The surface microstructures confirmed that the irregularly shaped grains seen on the surface of the as-deposited films is modified as &quot;radish-like&quot; morphology when irradiated with a fluence of 5 × 1011 ions/cm2. © 2011 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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