<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Nayak, P.K., Pinto, J.V., Gonçalves, G., Martins, R., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Environmental, optical, and electrical stability study of solution-processed zinc-tin-oxide thin-film transistors</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE/OSA Journal of Display Technology</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-80054898938&amp;partnerID=40&amp;md5=8c0722c32ec4f143d58b08ed793d6834</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">12</style></number><volume><style face="normal" font="default" size="100%">7</style></volume><pages><style face="normal" font="default" size="100%">640-643</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc-tin-oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value. © 2006 IEEE.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 15&lt;/p&gt;
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