<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, E., Barquinha, P., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">New developments on oxide electronics</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the International Display Workshops</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870703219&amp;partnerID=40&amp;md5=5754a749725171288fbd20b397b544d1</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">3</style></volume><pages><style face="normal" font="default" size="100%">1681-1684</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this article we review the recent progress in n- and p-type oxide based thin film transistors (TFT), with special emphasis to solution-processed and p-type, and we will summarize the major milestones already achieved with this emerging and very promising technology.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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