<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R.a , Figueiredo, V.a , Barros, R.a b , Barquinha, P.a , Gonçalves, G.a , Pereira, L.a , Ferreira, I.a , Fortunato, E.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">P-type oxide-based thin film transistors produced at low temperatures</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of SPIE - The International Society for Optical Engineering</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2012</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84858598530&amp;partnerID=40&amp;md5=e2a6403350a9f30a7a3360d9304eeff2</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">8263</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;P-type thin-film transistors (TFTs) using room temperature sputtered tin and copper oxide as a transparent oxide semiconductor have been produced on rigid and paper substrates. The SnO x films shows p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnO x phases, after annealing at 200°C. These films exhibit a hole carrier concentration in the range of ≈ 10 16-10 18 cm -3, electrical resistivity between 101-102 Ωcm, Hall mobility of 4.8 cm 2/Vs, optical band gap of 2.8 eV and average transmittance ≈ 85 % (400 to 2000 nm). Concerning copper oxide Cu xO thin films they exhibit a polycrystalline structure with a strongest orientation along (111) plane. The Cu xO films produced between an oxygen partial pressure of 9 to 75% showed p-type behavior, as it was measured by Hall effect and Seebeck measurements. The bottom gate p-type SnO x TFTs present field-effect mobility above 1.24 cm 2/Vs (including the paper p-type oxide TFT) and an on/off modulation ratio of 10 3 while the Cu xO TFTs exhibit a field-effect mobility of 1.3×10 -3 cm 2/Vs and an on/off ratio of 2×10 2. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 2&lt;/p&gt;
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