<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Shan, F.a , Liu, A.a , Liu, G.a , Meng, Y.a , Fortunato, E.b c , Martins, R.b c</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrO&lt;inf&gt;x&lt;/inf&gt; dielectric</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE/OSA Journal of Display Technology</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2015</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84929333677&amp;partnerID=40&amp;md5=1ee3f9138763b84ffff07d5bde049f48</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">6</style></number><volume><style face="normal" font="default" size="100%">11</style></volume><pages><style face="normal" font="default" size="100%">541-546</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrOx layer. The ZrOx thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm2 at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm2 at 50 Hz. The InZnO TFT incorporating the UV-treated ZrOx dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of 10&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 2&lt;/p&gt;
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