%0 Journal Article %J IEEE Electron Device Letters %D 2016 %T InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass %A Bahubalindruni, P.G.a , Tavares, V.G.b , Borme, J.c , De Oliveira, P.G.b , Martins, R.a , Fortunato, E.a , Barquinha, P.a %P 419-421 %R 10.1109/LED.2016.2535469 %U https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963839212&partnerID=40&md5=2d6c653ce01a9594eae321daaf5151c2 %V 37 %X

This letter presents a novel high-gain four-quadrant analog multiplier using only n-type enhancement indium- gallium-zinc-oxide thin-film-transistors. The proposed circuit improves the gain by using an active load with positive feedback. A Gilbert cell with a diode-connected load is also presented for comparison purposes. Both circuits were fabricated on glass at low temperature (200 °C) and were successfully characterized at room temperature under normal ambient conditions, with a power supply of 15 V and 4-pF capacitive load. The novel circuit has shown a gain improvement of 7.2 dB over the Gilbert cell with the diode-connected load. Static linearity response, total harmonic distortion, frequency response, and power consumption are reported. This circuit is an important signal processing building block in large-area sensing and readout systems, specially if data communication is involved. © 2016 IEEE.

%Z

cited By 0