@article {Guimar{\~a}es1989789,
	title = {Hydrogenated thin film silicon semiconductors produced by a two consecutive decomposition and deposition chamber system},
	journal = {Vacuum},
	volume = {39},
	number = {7-8},
	year = {1989},
	note = {<p>cited By 1</p>
},
	pages = {789-790},
	abstract = {<p>Undoped and doped hydrogenated amorphous silicon semiconductors (a-Si:H) have been produced by a two consecutive decomposition deposition chamber (TCDDC) system assisted by electromagnetic static fields. Through this technique, a spatial separation is achieved between the plasma chemistry and that of the deposition to avoid ion and electron (with high energies) bombardment on the growing surface. Besides this, the use of a static magnetic field perpendicular to the substrate will promote plasma confinement, so avoiding its contamination by residual gases adsorbed on the reactor walls. On the other hand, the use of two grids dc biased in the deposition chamber, will allow control of the main film precursors, responsible for the electro-optical and structural properties of deposited films. In this paper we shall discuss the deposition method used as well as the transport, structural and morphological properties presented by deposited films and its dependence on deposition parameters used. {\textcopyright} 1989.</p>
},
	doi = {10.1016/0042-207X(89)90038-9},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0024915137\&partnerID=40\&md5=8dc43b962dd4015365b5ff1a0e051b1d},
	author = {Guimar{\~a}es, L., Martins, R., Santos, M., Ma{\c c}arico, A., Carvalho, N., Fortunato, E., Vieira, M.}
}
