@conference {Vieira1994575,
	title = {Comparison of diffusion length measurements from the flying spot technique and the photocarrier grating method in amorphous thin films},
	booktitle = {Conference Record of the IEEE Photovoltaic Specialists Conference},
	volume = {1},
	year = {1994},
	note = {<p>cited By 0</p>
},
	pages = {575-578},
	abstract = {<p>Using the Flying Spot Technique (FST) we have studied minority carrier transport parallel and perpendicular to the surface of amorphous silicon films (a-Si:H). To reduce slow transients due to charge redistribution in low resistivity regions during the measurement we have applied a strong homogeneously absorbed bias light. The defect density was estimated from CPM measurements. The steady-state photocarrier grating technique (SSPG) is a 1-dimensional approach. However, the modulation depth of the carrier profile is also dependent on film surface properties, like surface recombination velocity. Both methods yield comparable diffusion lengths when applied to a-Si:H.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028693517\&partnerID=40\&md5=39d158bdfc02d8faa4f58313c721c7b1},
	author = {Vieira, M., Fantoni, A., Martins, R., Koynov, S., Wang, F., Grebner, S., Schwarz, R.}
}
