@conference {Fantoni1995695,
	title = {Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability},
	booktitle = {Proceedings of SPIE - The International Society for Optical Engineering},
	volume = {2397},
	year = {1995},
	note = {<p>cited By 0</p>
},
	pages = {695-702},
	abstract = {<p>The introduction into a traditional p.i.n. structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer ({\textquoteleft}i-layer{\textquoteright}), grown at a higher power density, present a high density of the defects and acts as {\textquoteleft}gettering centers{\textquoteright} able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyze the influence of the {\textquoteleft}i- layer{\textquoteright} position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation rom the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029237975\&partnerID=40\&md5=1a84365631e3349bd62f802614828553},
	author = {Fantoni, Alessandro, Vieira, Manuela, Martins, Rodrigo}
}
