@article {Martins1995143,
	title = {Static behaviour of thin-film position-sensitive detectors based on p-i-n a-Si:H devices},
	journal = {Sensors and Actuators: A. Physical},
	volume = {51},
	number = {2-3},
	year = {1995},
	note = {<p>cited By 0</p>
},
	pages = {143-151},
	abstract = {<p>The aim of this work is to provide the basis for the interpretation of the lateral photoeffect in p-i-n a-Si:H one-dimensional thin-film position-sensitive detectors (1D TFPSDs) under steady state, through an analytical model. The experimental data recorded in 1D TFPSD devices with different characteristics are compared with the predicted curves and the obtained correlations are discussed. {\textcopyright} 1996.</p>
},
	doi = {10.1016/0924-4247(95)01213-3},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029403161\&partnerID=40\&md5=62398d30f170086d9d3bbedb25d7d023},
	author = {Martins, R., Fortunato, E.}
}
