@article {Martins1996137,
	title = {Lateral effects in amorphous silicon photodiodes},
	journal = {Optical Materials},
	volume = {5},
	number = {1-2},
	year = {1996},
	note = {<p>cited By 2</p>
},
	pages = {137-144},
	abstract = {<p>The objective of this work is to provide a basis for the interpretation of the a-Si:H photodiode behaviour under low illumination level conditions, where a lateral leakage current plays an important role on the devices{\textquoteright} performances when the doped collecting layer can not be considered a true equipotential. To determine this effect, a-Si:H p.i.n devices with small metal dot contacts, matrix distributed, were produced and analysed before and after etching the surrounding doped region of the metal collecting contact. The experimental data fit a model that includes the contribution of a lateral leakage current influencing the J-V characteristics, responsivity and the apparent light degradation behaviour of the device.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029753373\&partnerID=40\&md5=cac738af0101e28020bcbe0d29c001ef},
	author = {Martins, R., Fortunato, E.}
}
