@conference {NunesdeCarvalho1996861,
	title = {Improvement of the ITO-p interface in a-Si:H solar cells using a thin SiO intermediate layer},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {420},
	year = {1996},
	note = {<p>cited By 1</p>
},
	pages = {861-865},
	abstract = {<p>The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030407693\&partnerID=40\&md5=36f09248d418819f380bd5c995d8d881},
	author = {Nunes de Carvalho, C., de Nijs, J.M.M., Ferreira, I., Fortunato, E., Martins, R.}
}
