@article {Martins19962143,
	title = {Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si:H p-i-n Diodes},
	journal = {IEEE Transactions on Electron Devices},
	volume = {43},
	number = {12},
	year = {1996},
	note = {<p>cited By 7</p>
},
	pages = {2143-2152},
	abstract = {<p>In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices. From this, an equivalent electric circuit is derived and the predicted values are compared with the experimental results obtained in 1-D TFPSD devices, with different sizes. The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device. {\textcopyright} 1996 IEEE.</p>
},
	doi = {10.1109/16.544385},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030379338\&partnerID=40\&md5=ccecaf09a3766c27fcb1cd1beab43793},
	author = {Martins, R.F.P., Fortunato, E.M.C.}
}
