@article {Fantoni1997110,
	title = {Modelling a μc-Si:H p-i-n device under non-uniform illumination},
	journal = {Thin Solid Films},
	volume = {296},
	number = {1-2},
	year = {1997},
	note = {<p>cited By 0</p>
},
	pages = {110-113},
	abstract = {<p>Microcrystalline p-i-n silicon devices are a prospective contender for application in large-area optoelectronics. In this paper we analyse the behaviour of a μc-Si:H p-i-n photodevice under non-uniform illumination. The effect of a spatially non-uniform illumination is to create lateral electric fields and current flows inside the structure. We present in this paper a numerical application of a complete bidimensional model describing the transport properties within the structure. The continuity equations forholes and electrons together with Poisson{\textquoteright}s equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The results of simulating p-i-n μc-Si:H junctions under non-uniform illumination show that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation. {\textcopyright} 1997 Elsevier Science S.A.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031099285\&partnerID=40\&md5=554b55d2c6a9166a1cb8b2afecb14ba5},
	author = {Fantoni, A., Vieira, M., Cruz, J., Martins, R.}
}
